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| AO4437 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4437 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free (meets ROHS & Sony 259 specifications). AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical. Features VDS (V) = -12V ID = -11 A (VGS = -4.5V) RDS(ON) < 16m (VGS = -4.5V) RDS(ON) < 20m (VGS = -2.5V) RDS(ON) < 25m (VGS = -1.8V) ESD Rating: 4KV HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -12 8 -11 -9 -20 3 2.1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 31 63 21 Max 40 75 30 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4437 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-9.6V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-11A Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-10A VGS=-1.8V, ID=-6A VDS=-5V, ID=-11A -0.3 -20 -0.55 12.4 17 15.9 20.4 38 -0.74 Min -12 -1 -5 1 10 -1 A 16 21 20 25 -1 -4.5 3960 910 757 6.9 37 4.5 11 15 43 158 95 64 50 4750 m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Typ Max Units V A A A gFS VSD IS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz 8.5 47 VGS=-4.5V, VDS=-6V, ID=-11A VGS=-4.5V, VDS=-6V, RL=0.55, RGEN=3 IF=-11A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-11A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4437 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -8.0V -2.0V 10 VDS=-5V 8 6 -ID(A) 125C 4 25C 2 0 0 0.2 0.4 0.6 0.8 1 -VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS(Volts) Figure 2: Transfer Characteristics 1.4 ID=-6A, VGS=-1.8V ID=-10A, VGS=-2.5V 1.2 ID=-11A, VGS=-4.5V 1.0 15 -ID (A) 10 -1.5V VGS=-1.0V 5 25 RDS(ON) (m) VGS=-1.8V 20 VGS=-2.5V 15 VGS=-4.5V 0 2 4 6 8 10 10 0.8 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-11A -IS (A) 1E-01 25C 1E-02 1E-03 125C 1E-04 1E-05 0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C 40 35 30 RDS(ON) (m) 25 20 15 10 5 0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C Alpha & Omega Semiconductor, Ltd. |
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